IONIZATION ENHANCED CRYSTALLIZATION IN AMORPHOUS GERMANIUM.GERMAIN P; SQUELARD S; BOURGOIN J et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 2; PP. 159-165; BIBL. 32 REF.Article

CRYSTALLIZATION IN AMORPHOUS GERMANIUMGERMAIN P; ZELLAMA K; SQUELARD S et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6986-6994; BIBL. 29 REF.Article

ELECTRICAL CONDUCTIVITY AND CRYSTALLIZATION IN AMORPHOUS GERMANIUM.GERMAIN P; SQUELARD S; BOURGOIN JC et al.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 23; NO 1; PP. 93-98; BIBL. 19 REF.Article

CRYSTALLIZATION KINETICS OF AMORPHOUS GERMANIUM.GERMAIN P; SQUELARD S; BOURGOIN J et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 1909-1913; BIBL. 21 REF.Article

CRYSTALLIZATION IN AMORPHOUS SILICONZELLAMA K; GERMAIN P; SQUELARD S et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 6995-7000; BIBL. 12 REF.Article

CRYSTALLIZATION OF PHOSPHORUS-DOPED AMORPHOUS SILICON FILMS PREPARED BY GLOW DISCHARGE DECOMPOSITION OF SILANESQUELARD S; ZELLAMA K; GERMAIN P et al.1981; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1981; VOL. 16; NO 12; PP. 657-662; ABS. FRE; BIBL. 12 REF.Article

POSSIBLE CONFIGURATIONAL MODEL FOR HYDROGEN IN AMORPHOUS SI:H. AN EXODIFFUSION STUDYZELLAMA K; GERMAIN P; SQUELARD S et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6648-6667; BIBL. 48 REF.Article

ON THE NATURE OF THE DISORDERED LAYER PRODUCED BY ION IMPLANTATIONZELLAMA K; GERMAIN P; SQUELARD S et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 12; PP. 901-905; BIBL. 10 REF.Article

Hydrogen exodiffusion experiments in phosphorous doped a-Si:HZELLAMA, K; GERMAIN, P; SQUELARD, S et al.Solid state communications. 1983, Vol 47, Num 5, pp 379-382, issn 0038-1098Article

Solid-phase crystallization kinetics in doped a-Si chemical-vapor-deposition filmsBISARO, R; MAGARINO, J; ZELLAMA, K et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 3568-3575, issn 0163-1829Article

Evolution of the optical gap during hydrogen exodiffusion in a-Si:H prepared by glow-discharge decomposition of silaneZELLAMA, K; GERMAIN, P; SQUELARD, S et al.Solid state communications. 1985, Vol 56, Num 8, pp 721-725, issn 0038-1098Article

Influence de l'état de la surface sur les propriétés optiques de couches minces de silicium amorphe hydrogéné déposées par «glow discharge»DECHELLE, F; BERGER, J. M; ANCE, C et al.Thin solid films. 1983, Vol 103, Num 3, pp 243-248, issn 0040-6090Article